2007-02-23 rev.1.5 page 1 bsp 316 p sipmos ? ? ? ? small-signal-transistor product summary v ds -100 v r ds(on) 1.8 ? i d -0.68 a feature ? p-channel ? enhancement mode ? logic level ? d v /d t rated pg-sot223-4-1 gate pin1 drain pin 2/4 source pin 3 marking bsp316p type package tape and reel information bsp 316 p p g-sot223-4-1 l6327: 1000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d -0.68 -0.54 a pulsed drain current t a =25c i d puls -2.72 reverse diode d v /d t i s =-0.68a, v ds =-48v, d i /d t =-200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t a =25c p tot 1.8 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56
bsp 316 p thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point (pin 4) r thjs - 15 25 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - 80 48 115 70 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =-250a v (br)dss -100 - - v gate threshold voltage, v gs = v ds i d =-170a v gs(th) -1 -1.5 -2 zero gate voltage drain current v ds =-100v, v gs =0, t j =25c v ds =-100v, v gs =0, t j =150c i dss - - -0.1 -10 -0.2 -100 a gate-source leakage current v gs =-20v, v ds =0 i gss - -10 -100 na drain-source on-state resistance v gs =-4.5v, i d =-0.61a r ds(on) - 1.5 2.3 drain-source on-state resistance v gs =-10v, i d =-0.68a r ds(on) - 1.4 1.8 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 2007-02-23 rev.1.5 page 2
bsp 316 p electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs | v ds | 2*| i d |* r ds(on)max , i d =-0.54a 0.5 1 - s input capacitance c iss v gs =0, v ds =-25v, f =1mhz - 117 146 pf output capacitance c oss - 27.7 34.5 reverse transfer capacitance c rss - 12 15 turn-on delay time t d(on) v dd =-50v, v gs =-10v, i d =-0.68a, r g =6 - 4.7 7 ns rise time t r - 7.5 11.2 turn-off delay time t d(off) - 67.4 101 fall time t f - 25.9 38.9 gate charge characteristics gate to source charge q gs v dd =-80v, i d =-0.68a - -0.2 -0.3 nc gate to drain charge q gd - -1.87 -2.8 gate charge total q g v dd =-80v, i d =-0.68a, v gs =0 to -10v - -5.1 -6.4 gate plateau voltage v (plateau) v dd =-80v, i d =-0.68a - -2.7 - v reverse diode inverse diode continuous forward current i s t a =25c - - -0.68 a inv. diode direct current, pulsed i sm - - -2.72 inverse diode forward voltage v sd v gs =0, i f =-0.68a - -0.85 -1.2 v reverse recovery time t rr v r =-50v, i f = l s , d i f /d t =100a/s - 44.2 55.3 ns reverse recovery charge q rr - 56.3 70.4 nc 2007-02-23 rev.1.5 page 3
bsp 316 p 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 w 1.9 bsp 316 p p tot 2 drain current i d = f ( t a ) parameter: | v gs | 10v 0 20 40 60 80 100 120 c 160 t a 0 -0.05 -0.1 -0.15 -0.2 -0.25 -0.3 -0.35 -0.4 -0.45 -0.5 -0.55 -0.6 a -0.75 bsp 316 p i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25c -10 -1 -10 0 -10 1 -10 2 -10 3 v v ds -2 -10 -1 -10 0 -10 1 -10 a bsp 316 p i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 250.0 s 4 transient thermal impedance z thja = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w bsp 316 p z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 2007-02-23 rev.1.5 page 4
bsp 316 p 5 typ. output characteristic i d = f ( v ds ) parameter: t j =25c, - v gs 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 -v ds 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 a 2.4 - i d 10v 5v 4.4v 3.6v 3.2v 2.8v 2.4v 2.2v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =25c, - v gs 0 0.4 0.8 1.2 1.6 a 2.4 - i d 0 1 2 3 4 5 7 r ds(on) 2.2v 2.4v 2.8v 3.2v 3.6v 4.4v 5v 10v 7 typ. transfer characteristics i d = f ( v gs ); | v ds | 2 x | i d | x r ds(on)max parameter: t j = 25 c 0 0.5 1 1.5 2 2.5 3 3.5 v 4.5 - v gs 0 0.5 1 1.5 2 2.5 a 3.5 - i d 8 typ. forward transconductance g fs = f( i d ) parameter: t j =25c 0 0.4 0.8 1.2 1.6 2 2.4 a 3.2 - i d 0 0.3 0.6 0.9 1.2 s 1.8 g fs 2007-02-23 rev.1.5 page 5
bsp 316 p 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = -0.68 a, v gs = -10 v -60 -20 20 60 100 c 180 t j 0 0.5 1 1.5 2 2.5 3 3.5 4 5 bsp 316 p r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 160 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v 2.4 v gs(th) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz, t j = 25 c 0 4 8 12 16 20 24 28 v 36 - v ds 0 10 1 10 2 10 3 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 v -3 v sd -2 -10 -1 -10 0 -10 1 -10 a bsp 316 p i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 2007-02-23 rev.1.5 page 6
bsp 316 p 13 typ. gate charge v gs = f ( q gate ) parameter: i d = -0.68 a pulsed, t j = 25 c 0 1 2 3 4 5 6 7 nc 8.5 |q g | 0 -2 -4 -6 -8 -10 -12 v -16 bsp 316 p v gs 0.2 v ds max 0.5 v ds max 0.8 v ds max 14 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j -90 -92 -94 -96 -98 -100 -102 -104 -106 -108 -110 -112 -114 v -120 bsp 316 p v (br)dss 2007-02-23 rev.1.5 page 7
bsp 316 p published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-02-23 rev.1.5 page 8
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